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Proceedings Paper

Performance of 650 nm AlGaInP RCLEDs with different P-type DBRs
Author(s): Yidan Tang; Yixin Chen; Jun Ma; Deshu Zou; Jinru Han; Xia Guo; Guangdi Shen
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Paper Abstract

Resonant cavity light-emitting diodes (RCLEDs) which composed of active region surrounded by two distributed Bragg reflector (DBR) mirrors have been reported in the communication system based on Plastic Optical Fiber (POF) and high brightness application. However, high performance of 650nm AlGaInP RCLED, which is strongly depends on the optimization of DBRs, especially the matched reflectivity between p-type and n-type DBR mirrors, is still difficult to obtain. In this paper, the performance of 650nm RCLEDs including 34-pair AlGaAs/AlAs n-type DBRs and different pairs of AlGaInP/AlInP p-type DBRs have been investigated both theoretically and experimentally. Top emitting chips with the size of 225x225μm2 without encapsulation were fabricated under the same conditions, experimental results reveal that the device of optimized DBR mirrors with 10-pair p-type DBRs obtain high efficiency, low turn-on voltage and forward resistance, good temperature stability.

Paper Details

Date Published: 26 November 2009
PDF: 10 pages
Proc. SPIE 7635, Display, Solid-State Lighting, Photovoltaics, and Optoelectronics in Energy, 763504 (26 November 2009); doi: 10.1117/12.850633
Show Author Affiliations
Yidan Tang, Beijing Univ. of Technology (China)
Yixin Chen, Beijing Univ. of Technology (China)
Jun Ma, Beijing Univ. of Technology (China)
Deshu Zou, Beijing Univ. of Technology (China)
Jinru Han, Beijing Univ. of Technology (China)
Xia Guo, Beijing Univ. of Technology (China)
Guangdi Shen, Beijing Univ. of Technology (China)


Published in SPIE Proceedings Vol. 7635:
Display, Solid-State Lighting, Photovoltaics, and Optoelectronics in Energy
Heonsu Jeon; Chih-Chung Yang, Editor(s)

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