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Proceedings Paper

Mid-wavelength InAsSb detectors based on nBn design
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Paper Abstract

The development of InAsSb detectors based on the nBn design for the mid-wave infrared (MWIR) spectral region is discussed. Comparisons of optical and electrical properties of InAsSb photodetectors with two different barrier material, namely, AlAs 0.15Sb0.75 (structure A) and AlAs0.10Sb0.9 (structure B) are reported. The dark current density in the AlAs0.15Sb0.85 is lower possibly due to the larger valence band offset. Clear room temperature spectral responses is observed and a specific detectivity (D*) of 1.4x1012 and 1.01x1012 cmHz1/2/W at 0.2 V, and a responsivity of 0.87 and 1.66 A/W under 0.2 V biasing at 77 K and 3.5 μm, assuming unity gain, was obtained for structures A and B, respectively.

Paper Details

Date Published: 3 May 2010
PDF: 7 pages
Proc. SPIE 7660, Infrared Technology and Applications XXXVI, 76602Z (3 May 2010); doi: 10.1117/12.850428
Show Author Affiliations
A. Khoshakhlagh, Univ. of New Mexico (United States)
S. Myers, Univ. of New Mexico (United States)
E. Plis, Univ. of New Mexico (United States)
M. N. Kutty, Univ. of New Mexico (United States)
B. Klein, Univ. of New Mexico (United States)
N. Gautam, Univ. of New Mexico (United States)
H. Kim, Univ. of New Mexico (United States)
E. P. G. Smith, Raytheon Vision Systems (United States)
D. Rhiger, Raytheon Vision Systems (United States)
S. M. Johnson, Raytheon Vision Systems (United States)
S. Krishna, Univ. of New Mexico (United States)


Published in SPIE Proceedings Vol. 7660:
Infrared Technology and Applications XXXVI
Bjørn F. Andresen; Gabor F. Fulop; Paul R. Norton, Editor(s)

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