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Proceedings Paper

SU-8 passivation of type-II InAs/GaSb strained layer superlattice detectors
Author(s): H. S. Kim; E. Plis; N. Gautam; A. Khoshakhlagh; S. Myers; M. N. Kutty; Y. Sharma; L. R. Dawson; S. Krishna
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Paper Abstract

We report on surface passivation studies for type-II InAs/GaSb superlattice (SL) PIN detectors designed to operate in the mid-wave infrared (MWIR) region and the long wavelength infrared (LWIR) spectrum. The two SL structures were grown by molecular beam epitaxy and processed into mesa diodes using standard lithography. A simple spin on photoresist, SU-8, was used to passivate the sample after a wet etch. Optical and electrical measurements were then undertaken on the two devices. The dark current density of a single pixel device with SU-8 passivation is reduced by four orders of magnitude and by a factor of eight compared to devices without any passivation for the MWIR and LWIR pin detectors, respectively, at 77K.

Paper Details

Date Published: 4 May 2010
PDF: 9 pages
Proc. SPIE 7660, Infrared Technology and Applications XXXVI, 76601U (4 May 2010); doi: 10.1117/12.850284
Show Author Affiliations
H. S. Kim, Univ. of New Mexico (United States)
E. Plis, Univ. of New Mexico (United States)
N. Gautam, Univ. of New Mexico (United States)
A. Khoshakhlagh, Univ. of New Mexico (United States)
S. Myers, Univ. of New Mexico (United States)
M. N. Kutty, Univ. of New Mexico (United States)
Y. Sharma, Univ. of New Mexico (United States)
L. R. Dawson, Univ. of New Mexico (United States)
S. Krishna, Univ. of New Mexico (United States)


Published in SPIE Proceedings Vol. 7660:
Infrared Technology and Applications XXXVI
Bjørn F. Andresen; Gabor F. Fulop; Paul R. Norton, Editor(s)

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