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Proceedings Paper

Radiation hardening of low-noise readout integrated circuit for infrared focal plane arrays
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Paper Abstract

A radiation-resistant readout integrated circuit for focal plane arrays was studied to improve the reliability of infrared image systems operating in a radioactive environment, such as in space or in the surroundings of a nuclear reactor. First, as radiation-hardened NMOSFET structure, which includes a layout modification technique, was proposed. The readout integrated circuit for infrared focal plane arrays was then designed on basis of the proposed NMOSFET layout. Commercial 0.35 um process technology was used to fabricate the proposed unit NMOSFET and the designed readout integrated circuit which is based on the proposed NMOSFET. The measured electrical characteristics of the fabricated unit NMOSFET and readout integrated circuit are in good agreement with the simulated results. For verification of the radiation tolerance, the fabricated chip was exposed to 1 Mrad (Si) of gamma radiation, which is high enough to guarantee reliable usage in space or in a very harsh radiation environment. While exposed to gamma radiation, the fabricated chip was connected to a power supply (3.3 V) for testing under the worst conditions. After being exposed to 1 Mrad of gamma radiation, the unit NMOSFET showed only a slight increment of a few picoamperes in the leakage current, and the designed readout integrated circuit showed little change at an output voltage of less than 10% of a proper output voltage. The changes in the characteristics of the unit NMOSFET and the designed readout infrared integrated circuit are at an allowable level in relation to process variation.

Paper Details

Date Published: 3 May 2010
PDF: 8 pages
Proc. SPIE 7660, Infrared Technology and Applications XXXVI, 76603W (3 May 2010); doi: 10.1117/12.849963
Show Author Affiliations
Min Su Lee, Korea Advanced Institute of Science and Technology (Korea, Republic of)
Yong Soo Lee, Kyungpook National Univ. (Korea, Republic of)
Hee Chul Lee, Korea Advanced Institute of Science and Technology (Korea, Republic of)


Published in SPIE Proceedings Vol. 7660:
Infrared Technology and Applications XXXVI
Bjørn F. Andresen; Gabor F. Fulop; Paul R. Norton, Editor(s)

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