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Proceedings Paper

Silicon carbide NEMS logic for high-temperature applications
Author(s): Mehran Mehregany; Te-Hao Lee
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Paper Abstract

This paper reports cantilever-type nano-electro-mechanical systems (NEMS) silicon carbide (SiC) switches capable of operation from 25°C to 600°C, with threshold voltages ≤5 V. The fabricated SiC switches are actuated electrostatically, wherein the suspended cantilever electrode is pulled down to contact the bottom stationary electrode. The switches, fabricated using surface micromachining, have electrode separation gaps determined by the ~75 nm-thick sacrificial SiO2. Two-terminal switches have been cycled more than 40 billion times at room temperature until failure and more than 2 million times at 600°C when the package wire bonds fail. The room temperature failure mechanisms of these switches are mechanical fracture and stiction. Stiction of the switch electrodes is strongly correlated to the roughness of their contacting surfaces. Measurements indicate that 60% of switches with 8 nm electrode surface roughness could be operated over billions cycles before fracture. In contrast, 85% of the switches with 1 nm roughness were stuck after fabrication release.

Paper Details

Date Published: 5 May 2010
PDF: 8 pages
Proc. SPIE 7679, Micro- and Nanotechnology Sensors, Systems, and Applications II, 76791J (5 May 2010); doi: 10.1117/12.849826
Show Author Affiliations
Mehran Mehregany, Case Western Reserve Univ. (United States)
Te-Hao Lee, Case Western Reserve Univ. (United States)

Published in SPIE Proceedings Vol. 7679:
Micro- and Nanotechnology Sensors, Systems, and Applications II
Thomas George; M. Saif Islam; Achyut Kumar Dutta, Editor(s)

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