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Proceedings Paper

Terahertz detection with field-effect-transistors via bulk plasmon-assisted self-mixing
Author(s): Sangwoo Kim; Mark S. Sherwin
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Paper Abstract

We previously reported resonant photovoltaic terahertz detection via bulk plasmons in GaAs field-effect-transistors (FETs). Here, we introduce a device model which incorporates the microscopic dynamics of terahertz-field-driven electrons in the FET channel, resonant excitation of three dimensional (bulk) plasmons, and self-mixing theory of Lisauskas and Pfeiffer. The resulting model can simulate our experimental results and implies a bulk plasmon-assisted terahertz self-mixing process occurs in the FET-based terahertz detectors. The model also suggests three factors are important to improving the device performance – power coupling efficiency, self-mixing efficiency, and resonance with bulk plasmons.

Paper Details

Date Published: 26 April 2010
PDF: 10 pages
Proc. SPIE 7671, Terahertz Physics, Devices, and Systems IV: Advanced Applications in Industry and Defense, 767104 (26 April 2010); doi: 10.1117/12.849710
Show Author Affiliations
Sangwoo Kim, Tanner Research, Inc. (United States)
Mark S. Sherwin, Univ. of California, Santa Barbara (United States)


Published in SPIE Proceedings Vol. 7671:
Terahertz Physics, Devices, and Systems IV: Advanced Applications in Industry and Defense
Mehdi Anwar; Nibir K. Dhar; Thomas W. Crowe, Editor(s)

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