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Design and characterization of strain-compensated InGaAs/GaAsSb type-II MQW structure with operation wavelength at ~3μm
Author(s): W. Y. Jiang; Baile Chen; Jinrong Yuan; A. L. Holmes
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Paper Abstract

GaInAs/GaAsSb type-II multiple quantum wells (MQWs) grown on InP substrates by molecular beam epitaxy (MBE) were investigated for potential use in p-i-n photodiodes operating in the mid-infrared spectral region. In these quantum well structures, electrons and holes are spatially separated. The resulting spatially indirect type-II detection occurs at longer wavelength than the spatially direct intraband recombination in either GaInAs or GaAsSb. A 4-band k · p Hamiltonian model was employed to calculate the detection wavelengths and wavefunction overlaps. A p-i-n structure with 100 pairs of Ga0.66In034As (~7.0 nm)/GaAs0.25Sb0.75 (~5.0 nm) MQWs structure with operation wavelength of above 3.0 μm was designed and grown by MBE. The compressively strained GaAsSb layers are strain-compensated by tensile strained GaInAs. Photo response of above 3 μm was observed by room temperature responsivity measurements.

Paper Details

Date Published: 3 May 2010
PDF: 8 pages
Proc. SPIE 7660, Infrared Technology and Applications XXXVI, 76603O (3 May 2010); doi: 10.1117/12.849562
Show Author Affiliations
W. Y. Jiang, Univ. of Virginia (United States)
Baile Chen, Univ. of Virginia (United States)
Jinrong Yuan, Univ. of Virginia (United States)
A. L. Holmes, Univ. of Virginia (United States)

Published in SPIE Proceedings Vol. 7660:
Infrared Technology and Applications XXXVI
Bjørn F. Andresen; Gabor F. Fulop; Paul R. Norton, Editor(s)

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