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Proceedings Paper

SWIR HgCdTe HDVIP detectors MTF Monte Carlo modeling and data
Author(s): A. I. D'Souza; M. G. Stapelbroek; C. Yoneyama; P. Ely; M. R. Skokan; H. D. Shih
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Paper Abstract

The photocurrent of High Density Vertically Integrated Photodiodes (HDVIP) manufactured in LPE grown SWIR (λc ~ 2.5 μm) HgCdTe material is modeled as a function of incident spot location using a Monte Carlo diffusion calculation in the p-type bulk. The Monte Carlo calculation assumes a 3 x 3 mini-array of detectors surrounded by guard detectors. Carriers generated in the n-regions are always collected. The result is a responsivity map that yields the individual detector "spot scan" profile that is then used to calculate the detector modulation transfer function (MTF). Fourier transforms of detector "spot scan" response profile provided experimental confirmation of MTF that corresponded to the Monte Carlo modeled MTF.

Paper Details

Date Published: 4 May 2010
PDF: 6 pages
Proc. SPIE 7660, Infrared Technology and Applications XXXVI, 76600Q (4 May 2010); doi: 10.1117/12.849554
Show Author Affiliations
A. I. D'Souza, DRS Sensors & Targeting Systems (United States)
M. G. Stapelbroek, DRS Sensors & Targeting Systems (United States)
C. Yoneyama, DRS Sensors & Targeting Systems (United States)
P. Ely, DRS Sensors & Targeting Systems (United States)
M. R. Skokan, DRS Sensors & Targeting Systems , Infrared Technologies Division (United States)
H. D. Shih, DRS Sensors & Targeting Systems , Infrared Technologies Division (United States)


Published in SPIE Proceedings Vol. 7660:
Infrared Technology and Applications XXXVI
Bjørn F. Andresen; Gabor F. Fulop; Paul R. Norton, Editor(s)

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