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Proceedings Paper

Improving 1D optical proximity effect matching for 45-nm node by scatterometry metrology
Author(s): Dennis Chang; Reiner Jungblut; Jason Shieh; Alek Chen; Paul Hinnen; Henry Megens; Koen Schreel
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Paper Abstract

The fingerprint of the optical proximity effect, OPE, is required to develop each process node's optical proximity correction (OPC) model. This model should work equally well on different exposure systems. However, small differences in optical and mechanical properties in the lithographic system can lead to a different CD characteristic for a given OPC. It becomes beneficial to match the OPE of one scanner to the scanner population in a fab. Here, we focus on aspects of angle resolving scatterometry metrology used for OPE matching of two XT:1700i scanners and compare those to SEM metrology. The capability of the scatterometry tool for monitoring the stability of OPE is evaluated. Scatterometry allows measuring the side wall angle, SWA, of a resist profile and this can be used as a measure for focus. Here, focus comparison by SWA is included into the matching process. For the application used here, the residual RMS mismatch through pitch for scatterometry could be reduced to 0.2nm compared to 0.5nm for CD-SEM.

Paper Details

Date Published: 14 December 2009
PDF: 8 pages
Proc. SPIE 7520, Lithography Asia 2009, 752036 (14 December 2009); doi: 10.1117/12.849553
Show Author Affiliations
Dennis Chang, ASML Taiwan Ltd. (Taiwan)
Reiner Jungblut, ASML Taiwan Ltd. (Taiwan)
Jason Shieh, ASML Taiwan Ltd. (Taiwan)
Alek Chen, ASML Taiwan Ltd. (Taiwan)
Paul Hinnen, ASML Netherlands B.V. (Netherlands)
Henry Megens, ASML Netherlands B.V. (Netherlands)
Koen Schreel, ASML Netherlands B.V. (Netherlands)


Published in SPIE Proceedings Vol. 7520:
Lithography Asia 2009
Alek C. Chen; Woo-Sung Han; Burn J. Lin; Anthony Yen, Editor(s)

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