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Proceedings Paper

Carrier lifetime measurements in InAs/GaSb strained layer superlattice structures
Author(s): Stefan P. Svensson; Dmitry Donetsky; Ding Wang; Patrick Maloney; Gregory Belenky
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Paper Abstract

Minority carrier lifetime, photoluminescence (PL), and interband absorption in midinfrared range of spectra were measured in InAs/GaSb strained-layer superlattices (SLS) grown by molecular beam epitaxy (MBE) on GaSb substrates. The carrier lifetime was determined by time-resolved PL (TRPL) and from analysis of PL response to sine-wavemodulated excitation. Studies of the PL kinetics in the frequency domain allowed for direct lifetime measurements in SLS structures with an excess carrier concentration level of 3.5×1015 cm-3. The minority carrier lifetime at T = 77 K was obtained from the dependence of the carrier lifetime on excitation power. SLS structures with similar absorption wavelengths but with different InAs and GaSb layer thicknesses and with different amounts of strain were investigated and compared with mercury cadmium telluride (MCT) samples. No apparent trend was seen in structures with different number of interfaces per unit length. All SLS lifetime values measured so far are more than an order of magnitude lower than those of MCT.

Paper Details

Date Published: 3 May 2010
PDF: 6 pages
Proc. SPIE 7660, Infrared Technology and Applications XXXVI, 76601V (3 May 2010); doi: 10.1117/12.849514
Show Author Affiliations
Stefan P. Svensson, U.S. Army Research Lab. (United States)
Dmitry Donetsky, Stony Brook Univ. (United States)
Ding Wang, Stony Brook Univ. (United States)
Patrick Maloney, U.S. Army Night Vision & Electronic Sensors Directorate (United States)
Gregory Belenky, Stony Brook Univ. (United States)


Published in SPIE Proceedings Vol. 7660:
Infrared Technology and Applications XXXVI
Bjørn F. Andresen; Gabor F. Fulop; Paul R. Norton, Editor(s)

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