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Proceedings Paper

MWIR InAsSb XBn detectors for high operating temperatures
Author(s): Philip Klipstein; Olga Klin; Steve Grossman; Noam Snapi; Barak Yaakobovitz; Maya Brumer; Inna Lukomsky; Daniel Aronov; Michael Yassen; Boris Yofis; Alex Glozman; Tal Fishman; Eyal Berkowitz; Osnat Magen; Itay Shtrichman; Eliezer Weiss
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Paper Abstract

An XBn photovoltaic device has a band profile similar to that of a standard homojunction p-n diode, except that the depletion region is made from a wide bandgap barrier material with a negligible valence band offset but a large conduction band offset. In this notation, "X" stands for the n- or p-type contact layer, "B", for the n-type, wide bandgap, barrier layer, and "n", for the n-type, narrow bandgap, active layer. In this work, we report on the fabrication of XBn devices, which were grown by Molecular Beam Epitaxy (MBE) on GaSb substrates. Each structure has an InAsSb active layer of thickness ~1.5μm and a 0.2-0.5μm thick AlSbAs barrier layer. Good growth uniformity was achieved with lattice matching of better than 500ppm. Selected layers have been processed into devices which operate with a high internal quantum efficiency at a bias of ~0.1-0.2V, and which exhibit a very low dark current due to the strong suppression of the current component due to bulk Generation-Recombination processes. From dark current measurements, a minority carrier lifetime of >670nS has been estimated in devices with an active layer doping of ~4×1015cm-3. In optimized, lattice matched, devices with this doping and an active layer thickness of 4μm, a cut-off wavelength of ~ 4.0 - 4.1μm is expected at 160K, with a dark current density of ~10-6 A cm-2 and a quantum efficiency of >70% (λ<4μm). These figures correspond to BLIP operation at 160K with a photocurrent to dark current ratio of ~4 at f/3.

Paper Details

Date Published: 4 May 2010
PDF: 9 pages
Proc. SPIE 7660, Infrared Technology and Applications XXXVI, 76602Y (4 May 2010); doi: 10.1117/12.849503
Show Author Affiliations
Philip Klipstein, SCD Semiconductor Devices (Israel)
Olga Klin, SCD Semiconductor Devices (Israel)
Steve Grossman, SCD Semiconductor Devices (Israel)
Noam Snapi, SCD Semiconductor Devices (Israel)
Barak Yaakobovitz, SCD Semiconductor Devices (Israel)
Maya Brumer, SCD Semiconductor Devices (Israel)
Inna Lukomsky, SCD Semiconductor Devices (Israel)
Daniel Aronov, SCD Semiconductor Devices (Israel)
Michael Yassen, SCD Semiconductor Devices (Israel)
Boris Yofis, SCD Semiconductor Devices (Israel)
Alex Glozman, SCD Semiconductor Devices (Israel)
Tal Fishman, SCD Semiconductor Devices (Israel)
Eyal Berkowitz, SCD Semiconductor Devices (Israel)
Osnat Magen, SCD Semiconductor Devices (Israel)
Itay Shtrichman, SCD Semiconductor Devices (Israel)
Eliezer Weiss, SCD Semiconductor Devices (Israel)


Published in SPIE Proceedings Vol. 7660:
Infrared Technology and Applications XXXVI
Bjørn F. Andresen; Gabor F. Fulop; Paul R. Norton, Editor(s)

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