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Proceedings Paper

Analysis and comparison of UV photodetectors based on wide bandgap semiconductors
Author(s): Qin Wang; Susan Savage; Bertrand Noharet; Ingemar Petermann; Sirpa Persson; Susanne Almqvist; Mietek Bakowski; Jan Y. Andersson
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Paper Abstract

Performance, advantages and drawbacks of GaN- and SiC-based ultraviolet (UV) photodetectors are analyzed and compared. This includes metal-semiconductor-metal photodetectors, p-i-n photodiodes and avalanche photodiodes. Design, process and characterization of these devices are described. Fabricated p-i-n InGaN/GaN quantum well photodetectors are shown to exhibit a quantum efficiency of about 50% at 365 nm with a peak ultraviolet to visible rejection ratio more than 3 orders of magnitude. A novel SiC avalanche photodiode design is shown to produce stable avalanche breakdown characteristics for devices up to 2mm in diameter. A significant increase of its photo responsivity is also demonstrated when the avalanche voltage is applied.

Paper Details

Date Published: 10 March 2010
PDF: 10 pages
Proc. SPIE 7602, Gallium Nitride Materials and Devices V, 760225 (10 March 2010); doi: 10.1117/12.849460
Show Author Affiliations
Qin Wang, Acreo AB (Sweden)
IMAGIC Ctr. (Sweden)
Susan Savage, Acreo AB (Sweden)
IMAGIC Ctr. (Sweden)
Bertrand Noharet, Acreo AB (Sweden)
IMAGIC Ctr. (Sweden)
Ingemar Petermann, Acreo AB (Sweden)
IMAGIC Ctr. (Sweden)
Sirpa Persson, Acreo AB (Sweden)
IMAGIC Ctr. (Sweden)
Susanne Almqvist, Acreo AB (Sweden)
IMAGIC Ctr. (Sweden)
Mietek Bakowski, Acreo AB (Sweden)
IMAGIC Ctr. (Sweden)
Jan Y. Andersson, Acreo AB (Sweden)
IMAGIC Ctr. (Sweden)

Published in SPIE Proceedings Vol. 7602:
Gallium Nitride Materials and Devices V
Jen-Inn Chyi; Yasushi Nanishi; Hadis Morkoç; Cole W. Litton; Joachim Piprek; Euijoon Yoon, Editor(s)

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