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Proceedings Paper

Resist residue removal using UV ozone treatment
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Paper Abstract

In a conventional lithography process, the resist pattern is removed by dry strip or wet chemical etch. The wet chemical etch includes sulfuric peroxide etch and solvent etch. The wet chemical etch process is always combined with the dry strip process to meet the residue process spec. However, in some applications, only the wet-etch process can be used to avoid substrate damage during the plasma step. However, organic residue can be found from particle surface scan and TGA/DSC after normal solvent strip. In this paper, we investigate polymer residue stripping using only solvent as well as solvent in combination with UV treatment. For solvents only, some solvents different from the conventional PGMEA/PGME mixture in polarity, also exhibited stripping ability but the efficiency is not as good as PGME/PGMEA mixture. When supplemented with UV treatment, the organic residue can be further decomposed and removed completely. The UV we used contains 185nm and 254nm wavelengths. Ozone is generated during UV exposure and acts as oxidant. The organic residue is thus decomposed and removed. It has been proven as an effective method to cleave the C-C bond without damaging the wafer substrate. The organic residue on the wafer surface can be easily stripped away under UV-ozone exposure. Its defect performance is also discussed in this paper.

Paper Details

Date Published: 29 March 2010
PDF: 9 pages
Proc. SPIE 7639, Advances in Resist Materials and Processing Technology XXVII, 76391A (29 March 2010); doi: 10.1117/12.849449
Show Author Affiliations
Shu-Fang Chen, Taiwan Semiconductor Manufacturing Co. Ltd. (Taiwan)
Ching-Yu Chang, Taiwan Semiconductor Manufacturing Co. Ltd. (Taiwan)
Yao-Ching Ku, Taiwan Semiconductor Manufacturing Co. Ltd. (Taiwan)


Published in SPIE Proceedings Vol. 7639:
Advances in Resist Materials and Processing Technology XXVII
Robert D. Allen, Editor(s)

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