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Proceedings Paper

Is the resist sidewall after development isotropic or anisotropic? effects of resist sidewall morphology on LER reduction and transfer during etching
Author(s): Vassilios Constantoudis; George Kokkoris; Evangelos Gogolides; Erwine Pargon; Mickael Martin
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Paper Abstract

Measurements of the sidewall morphology of commercial resist lines (3D Line Edge Roughness) after lithography and before etching by CD-AFM and SEM show that they exhibit anisotropy in the form of striations perpendicular to line direction. When this anisotropy of post-litho resist sidewalls is included in the models for trimming and pattern transfer proposed in [V. Constantoudis et al., Proc SPIE 7273, 72732J (2009)], then the models predict the beneficial role of trimming process in LER reduction during pattern transfer in agreement with experimental results. Furthermore, experimental and simulation studies show that the CD-AFM measurements of the 3D Line Width Roughness may overestimate the correlation length. Taking into account this finding in the model for trimming, we found that model predictions approach further the experimental results.

Paper Details

Date Published: 25 March 2010
PDF: 11 pages
Proc. SPIE 7639, Advances in Resist Materials and Processing Technology XXVII, 76392T (25 March 2010); doi: 10.1117/12.849300
Show Author Affiliations
Vassilios Constantoudis, Institute of Microelectronics (Greece)
George Kokkoris, Institute of Microelectronics (Greece)
Evangelos Gogolides, Institute of Microelectronics (Greece)
Erwine Pargon, LTM-CNRS (France)
Mickael Martin, LTM-CNRS (France)


Published in SPIE Proceedings Vol. 7639:
Advances in Resist Materials and Processing Technology XXVII
Robert D. Allen, Editor(s)

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