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Proceedings Paper

Aerial image improvements on the Intel MET
Author(s): Roman Caudillo; Todd Younkin; Steve Putna; Alan Myers; Yashesh Shroff; Terence Bacuita; Grant Kloster; Erik Sohmen
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Paper Abstract

Since its installment in 2004, Intel's extreme ultraviolet (EUV) micro-exposure tool (MET) has demonstrated significant improvements in ultimate resolution capability. Initially capable of printing 45nm half-pitch (HP) lines with a 160nm depth of focus (DOF), it is now capable of printing 22nm HP lines with up to a 275nm DOF and demonstrating modulation down to 18nm HP. Initial improvements in resolution have been chiefly attributable to the maturation of EUV masks and photoresists. Recent improvements that have enabled the 22nm HP imaging with a sizeable process window are largely due to new illumination options that have become available as a result of recent tool upgrades. In particular, the installation of a new nested Wolter collector with an additional outer shell that extended the maximum partial coherence (σ) from 0.55 to 0.68, in conjunction with an updated pupil wheel and apertures, has enabled new rotated quadrapole and on-axis dipole illumination settings with 0.36 inner σ and 0.68 outer σ. Here we present simulated contrast curves alongside the experimental imaging results for the Intel MET using the newly available quadrapole and on-axis dipole illumination settings and discuss our future plans for continued improvements to the Intel MET aerial image.

Paper Details

Date Published: 22 March 2010
PDF: 11 pages
Proc. SPIE 7636, Extreme Ultraviolet (EUV) Lithography, 76363I (22 March 2010); doi: 10.1117/12.849142
Show Author Affiliations
Roman Caudillo, Intel Corp. (United States)
Todd Younkin, Intel Corp. (United States)
Steve Putna, Intel Corp. (United States)
Alan Myers, Intel Corp. (United States)
Yashesh Shroff, Intel Corp. (United States)
Terence Bacuita, Intel Corp. (United States)
Grant Kloster, Intel Corp. (United States)
Erik Sohmen, Carl Zeiss SMT AG (Germany)


Published in SPIE Proceedings Vol. 7636:
Extreme Ultraviolet (EUV) Lithography
Bruno M. La Fontaine, Editor(s)

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