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Proceedings Paper

A novel defect detection optical system using 199-nm light source for EUVL mask
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Paper Abstract

Lithography potential expands for 45nm node to 32nm device production by the development of immersion technology and the introduction of phase shift mask. We have already developed the mask inspection system using 199nm wavelength with simultaneous transmitted illumination and reflected illumination optics, and is an effectual candidate for hp 32nm node mask inspection. Also, it has high defect sensitivity because of its high optical resolution, so as to be utilized for leading edge mask to next generation lithography. EUV lithography with 13.5nm exposure wavelength is dominant candidate for the next generation lithography because of its excellent resolution for 2x half pitch (hp) node device. But, applying 199nm optics to complicated lithography exposure tool option for hp2x nm node and beyond, further development such as image contrast enhancement will be needed. EUVL-mask has different configuration from transmitted type optical-mask. It is utilized for reflected illumination type exposure tool. Its membrane structure has reverse contrast compared with optical-mask. This nature leads image profile difference from optical-mask. A feasibility study was conducted for EUV mask pattern defect inspection using DUV illumination optics with two TDI (Time Delay Integration) sensors. To optimize the inspection system configuration, newly developed Nonlinear Image Contrast Enhancement method (NICE) is presented. This function capability greatly enhances inspectability of EUVL mask.

Paper Details

Date Published: 1 April 2010
PDF: 10 pages
Proc. SPIE 7638, Metrology, Inspection, and Process Control for Microlithography XXIV, 76382Z (1 April 2010); doi: 10.1117/12.848679
Show Author Affiliations
Ryoichi Hirano, Advanced Mask Inspection Technology, Inc. (Japan)
Nobutaka Kikuiri, Advanced Mask Inspection Technology, Inc. (Japan)
Masatoshi Hirono, Advanced Mask Inspection Technology, Inc. (Japan)
Riki Ogawa, Advanced Mask Inspection Technology, Inc. (Japan)
Hiroyuki Sigemura, Semiconductor Leading Edge Technologies, Inc. (Japan)
Kenichi Takahara, Nuflare Technology, Inc. (Japan)
Hideaki Hashimoto, Nuflare Technology, Inc. (Japan)


Published in SPIE Proceedings Vol. 7638:
Metrology, Inspection, and Process Control for Microlithography XXIV
Christopher J. Raymond, Editor(s)

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