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Proceedings Paper

From pin-point design based critical dimension metrology toward comprehensive evaluation of IC patterning integrity
Author(s): Chris Sallee; Wayne Clark; Bo Jou Lu; Vladimir Ukraintsev; Vitali Khvatkov
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Paper Abstract

In this paper we demonstrate the process of creating a large-area, extreme field of view (XFOV) SEM image of a critical layer of an IC product, using an array of images captured with a typical, production CD-SEM. Individual CD-SEM images, taken side-by-side over a large area were processed to create a combined extreme field of view (XFOV) image. All feature edges were identified across this XFOV image and the edges extracted, creating feature contours. The feature contours were then compared to design and simulation data, and differences identified.

Paper Details

Date Published: 2 April 2010
PDF: 10 pages
Proc. SPIE 7638, Metrology, Inspection, and Process Control for Microlithography XXIV, 76382N (2 April 2010); doi: 10.1117/12.848619
Show Author Affiliations
Chris Sallee, Smart Imaging Technologies (United States)
Wayne Clark, Smart Imaging Technologies (United States)
Bo Jou Lu, United Microelectronics Corp. (Taiwan)
Vladimir Ukraintsev, Nanometrology International, Inc. (United States)
Vitali Khvatkov, Smart Imaging Technologies (United States)


Published in SPIE Proceedings Vol. 7638:
Metrology, Inspection, and Process Control for Microlithography XXIV
Christopher J. Raymond, Editor(s)

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