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Proceedings Paper

Increased pressure digital metalorganic vapor phase epitaxy system with high-speed switching valves for growing high-In-content GaInN
Author(s): Hiroshi Amano; Kensuke Nagata; Kentaro Nagamatsu; Daisuke Iida; Motoaki Iwaya; Satoshi Kamiyama; Isamu Akasaki
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Paper Abstract

Increased-pressure metalorganic vapor phase epitaxy (MOVPE) system with high speed switching valves is found to be effective for growing In-rich GaInN at a high temperature. High-speed switching valves enable the atomic layer epitaxy of high quality AlGaN at a low temperature, by which we can grow thin AlGaN capping layer without the thermal decomposition of underlying In-rich GaInN. This new growth technology sheds light on the digital alloy growth for the development of high-efficiency nitride-based visible long -wavelength light emitters.

Paper Details

Date Published: 11 February 2010
PDF: 6 pages
Proc. SPIE 7617, Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XIV, 761702 (11 February 2010); doi: 10.1117/12.848616
Show Author Affiliations
Hiroshi Amano, Meijo Univ. (Japan)
Kensuke Nagata, Meijo Univ. (Japan)
Kentaro Nagamatsu, Meijo Univ. (Japan)
Daisuke Iida, Meijo Univ. (Japan)
Motoaki Iwaya, Meijo Univ. (Japan)
Satoshi Kamiyama, Meijo Univ. (Japan)
Isamu Akasaki, Meijo Univ. (Japan)


Published in SPIE Proceedings Vol. 7617:
Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XIV
Klaus P. Streubel; Heonsu Jeon; Li-Wei Tu; Norbert Linder, Editor(s)

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