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Proceedings Paper

Thin film transistors with wurtzite ZnO channels grown on Si3N4/SiO2/Si (111) substrates by pulsed laser deposition
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Paper Abstract

Thin Film Transistors (TFT) were made by growing ZnO on Si3N4/SiO2/Si (111) substrates by pulsed laser deposition. X-ray diffraction and scanning electron microscope studies revealed the ZnO to have a polycrystalline wurtzite structure with a smooth surface, good crystallographic quality and a strong preferential c-axis orientation. Transmission studies in similar ZnO layers on glass substrates showed high transmission over the whole visible spectrum. Electrical measurements of a back gate geometry FET showed an enhancement-mode response with hard saturation, mA range Id and a VON ~ 0V. When scaled down, such TFTs may be of interest for high frequency applications.

Paper Details

Date Published: 2 March 2010
PDF: 5 pages
Proc. SPIE 7603, Oxide-based Materials and Devices, 760318 (2 March 2010); doi: 10.1117/12.848512
Show Author Affiliations
D. J. Rogers, Nanovation SARL (France)
V. E. Sandana, Nanovation SARL (France)
Northwestern Univ. (United States)
F. Hosseini Teherani, Nanovation SARL (France)
M. Razeghi, Northwestern Univ. (United States)


Published in SPIE Proceedings Vol. 7603:
Oxide-based Materials and Devices
Ferechteh Hosseini Teherani; David C. Look; Cole W. Litton; David J. Rogers, Editor(s)

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