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Proceedings Paper

Subwavelength antireflection structures and their device applications
Author(s): Jae Su Yu; Young Min Song; Jung Woo Leem; Yong Tak Lee
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Paper Abstract

We report the subwavelength antireflection structures in various semiconductor materials such as Si, ZnO, and GaP/light emitting diode (LED) structure for LED and solar cell applications in the visible and near-infrared wavelength region, together with the rigorous coupled wave analysis simulation. Subwavelength structures are fabricated by holographic lithography and dry etching, effectively suppressing the surface reflection. To enhance the absorption efficiency over a wide-angle broadband range of incident light, the thin-film crystalline Si solar cells with subwavelength structure, which reduce the surface reflection, are studied. The improvement of light intensity is achieved for the fabricated LEDs with a subwavelength structure compared to the conventional LEDs due to a strongly reduced internal reflection at the semiconductor/air interface.

Paper Details

Date Published: 23 January 2010
PDF: 8 pages
Proc. SPIE 7608, Quantum Sensing and Nanophotonic Devices VII, 760812 (23 January 2010); doi: 10.1117/12.848481
Show Author Affiliations
Jae Su Yu, Kyung Hee Univ. (Korea, Republic of)
Young Min Song, Gwangju Institute of Science and Technology (Korea, Republic of)
Jung Woo Leem, Kyung Hee Univ. (Korea, Republic of)
Yong Tak Lee, Gwangju Institute of Science and Technology (Korea, Republic of)


Published in SPIE Proceedings Vol. 7608:
Quantum Sensing and Nanophotonic Devices VII
Manijeh Razeghi; Rengarajan Sudharsanan; Gail J. Brown, Editor(s)

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