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Proceedings Paper

Evaluation of lithographic benefits of using ILT techniques for 22nm-node
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Paper Abstract

As increasing complexity of design and scaling continue to push lithographic imaging to its k1 limit, lithographers have been developing computational lithography solutions to extend 193nm immersion lithography to the 22nm technology node. In our paper, we investigate the beneficial source or mask solutions with respect to pattern fidelity and process variation (PV) band performances for 1D through pitch patterns, SRAM and Random Logic Standard Cells. The performances of two different computational lithography solutions, idealized un-constrained ILT mask and manhattanized mask rule constrain (MRC) compliant mask, are compared. Additionally performance benefits for process-window aware hybrid assist feature (AF) are gauged against traditional rule-based AF. The results of this study will demonstrate the lithographic performance contribution that can be obtained from these mask optimization techniques in addition to what source optimization can achieve.

Paper Details

Date Published: 10 March 2010
PDF: 17 pages
Proc. SPIE 7640, Optical Microlithography XXIII, 76400L (10 March 2010); doi: 10.1117/12.848479
Show Author Affiliations
Yi Zou, GLOBALFOUNDRIES Inc. (United States)
Yunfei Deng, GLOBALFOUNDRIES Inc. (United States)
Jongwook Kye, GLOBALFOUNDRIES Inc. (United States)
Luigi Capodieci, GLOBALFOUNDRIES Inc. (United States)
Cyrus Tabery, GLOBALFOUNDRIES Inc. (United States)
Thuc Dam, Luminescent Technologies, Inc. (United States)
Anthony Aadamov, Luminescent Technologies, Inc. (United States)
Ki-Ho Baik, Luminescent Technologies, Inc. (United States)
Linyong Pang, Luminescent Technologies, Inc. (United States)
Bob Gleason, Luminescent Technologies, Inc. (United States)


Published in SPIE Proceedings Vol. 7640:
Optical Microlithography XXIII
Mircea V. Dusa; Will Conley, Editor(s)

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