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Proceedings Paper

High brightness EUV light source modeling
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Paper Abstract

EUV source for actinic mask metrology, particularly for defect inspection, requires extremely high brightness. The selfabsorption of radiation limits the in-band EUV radiance of the source plasma and the etendue constraint limits the usable power of a conventional single unit EUV source. Theoretical study and numerical modelling has been carried out to address fundamental issues in tin and xenon plasmas and to optimize the performance of EUV sources. The highly ionized xenon plasma in the presence of fast electrons demonstrates the enhanced radiance. Theoretical models and robust modelling tools are being further developed under an international collaboration project FIRE in the frame of the EU FP7 IAPP program. NANO-UV is delivering a new generation of EUV light source with an intrinsic photon collector. Extensive numerical modelling has provided basic numbers to select the optimal regimes for tin and xenon based source operation. From these designs, a family of specially configured multiplexed source structures is being introduced to address the mask metrology needs.

Paper Details

Date Published: 23 March 2010
PDF: 10 pages
Proc. SPIE 7636, Extreme Ultraviolet (EUV) Lithography, 76363A (23 March 2010); doi: 10.1117/12.848473
Show Author Affiliations
Sergey V. Zakharov, NANO-UV SAS (France)
EPPRA SAS (France)
Kurchatov Institute (Russian Federation)
Peter Choi, NANO-UV SAS (France)
EPPRA SAS (France)
Vasily S. Zakharov, EPPRA SAS (France)


Published in SPIE Proceedings Vol. 7636:
Extreme Ultraviolet (EUV) Lithography
Bruno M. La Fontaine, Editor(s)

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