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Proceedings Paper

CMOS process compatible directed block copolymer self-assembly for 20nm contact holes and beyond
Author(s): Li-Wen Chang; Xin-Yu Bao; H.-S. Philip Wong
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Paper Abstract

Single FETs and CMOS inverters with 20 nm contact holes patterned using self-assembled diblock copolymer are demonstrated in this work. Alignment of the self-assembled contact holes to the MOSFET source and drain is achieved with a unique guiding layer and the self-assembly process is integrated with an existing CMOS process flow using conventional tools on a full 4" wafer level. Potential application for block copolymer patterning on SRAM circuit level is also discussed.

Paper Details

Date Published: 1 April 2010
PDF: 9 pages
Proc. SPIE 7637, Alternative Lithographic Technologies II, 76370I (1 April 2010); doi: 10.1117/12.848430
Show Author Affiliations
Li-Wen Chang, Stanford Univ. (United States)
Xin-Yu Bao, Stanford Univ. (United States)
H.-S. Philip Wong, Stanford Univ. (United States)


Published in SPIE Proceedings Vol. 7637:
Alternative Lithographic Technologies II
Daniel J. C. Herr, Editor(s)

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