Share Email Print

Proceedings Paper

CMOS process compatible directed block copolymer self-assembly for 20nm contact holes and beyond
Author(s): Li-Wen Chang; Xin-Yu Bao; H.-S. Philip Wong
Format Member Price Non-Member Price
PDF $14.40 $18.00
cover GOOD NEWS! Your organization subscribes to the SPIE Digital Library. You may be able to download this paper for free. Check Access

Paper Abstract

Single FETs and CMOS inverters with 20 nm contact holes patterned using self-assembled diblock copolymer are demonstrated in this work. Alignment of the self-assembled contact holes to the MOSFET source and drain is achieved with a unique guiding layer and the self-assembly process is integrated with an existing CMOS process flow using conventional tools on a full 4" wafer level. Potential application for block copolymer patterning on SRAM circuit level is also discussed.

Paper Details

Date Published: 1 April 2010
PDF: 9 pages
Proc. SPIE 7637, Alternative Lithographic Technologies II, 76370I (1 April 2010); doi: 10.1117/12.848430
Show Author Affiliations
Li-Wen Chang, Stanford Univ. (United States)
Xin-Yu Bao, Stanford Univ. (United States)
H.-S. Philip Wong, Stanford Univ. (United States)

Published in SPIE Proceedings Vol. 7637:
Alternative Lithographic Technologies II
Daniel J. C. Herr, Editor(s)

© SPIE. Terms of Use
Back to Top