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Proceedings Paper

Non-traditional resist designs using molecular resists: positive tone cross-linked and non-chemically amplified molecular resists
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Paper Abstract

Two different types of non-traditional molecular resists were synthesized and characterized. A positive-tone cross-linked molecular resist was made that functions by first forming an etch resistant film via thermal cross-linking of vinyl ether functionalized small molecules followed by patterning of the film via acid catalyzed cleavage of the resulting acetal bonds. DPA-2VE, a single multi-functional molecular resist of this type, showed DUV sensitivity of 7 mJ/cm2 and a contrast of 5.2 for development in either organic solvent or aqueous base. Using high resolution patterning with a 100 keV e-beam, it was possible to demonstrate feature resolutions down to 40 nm. When 0.26N TMAH was used as a developer, the dose-to-size was 84 μC/cm2 with a 3σ LER of 14.2 nm. Using MIBK as a developer, the dose-to-size was 104 μC/cm2 and the 3σ LER was 7.4 nm. A series of non-chemically amplified molecular resists based on using 2- nitrobenzyl ethers as photosensitive protecting groups were also made. One formulation showed a DUV sensitivity of 1 mJ/cm2, while another formulation which showed the best contrast of 8.3 obtained at a sensitivity of 10 mJ/cm2. However, under 100 keV e-beam patterning, the 2-nitrobenzyl ether protected materials showed little to no response even up to 3000 μC/cm2.

Paper Details

Date Published: 31 March 2010
PDF: 13 pages
Proc. SPIE 7639, Advances in Resist Materials and Processing Technology XXVII, 76392F (31 March 2010); doi: 10.1117/12.848419
Show Author Affiliations
Richard A. Lawson, Georgia Institute of Technology (United States)
David E. Noga, Georgia Institute of Technology (United States)
Jing Cheng, Georgia Institute of Technology (United States)
Laren M. Tolbert, Georgia Institute of Technology (United States)
Clifford L. Henderson, Georgia Institute of Technology (United States)


Published in SPIE Proceedings Vol. 7639:
Advances in Resist Materials and Processing Technology XXVII
Robert D. Allen, Editor(s)

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