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Proceedings Paper

Characterization of line-edge roughness (LER) propagation from resists: underlayer interfaces in ultrathin resist films
Author(s): Simi A. George; Patrick P. Naulleau; Ahila Krishnamoorthy; Zeyu Wu; Edward W. Rutter; Joseph T. Kennedy; Song Yuan Xie; Kyle Y. Flanigan; Thomas I. Wallow
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Paper Abstract

Line edge roughness evolutions in EUV resist patterns are investigated. Three dimensional scanning electron microscopy images show the pattern sidewall roughness to be highly anisotropic and the roughness to be propagating from the resistsubstrate interface up the resist pattern sidewall. In ultrathin resist films, (film thickness ca. 100 nm and below) roughness is found to be fully correlated from the resist-substrate interface to the resist-air interface. This behavior is seen regardless of the resist platforms being used. Underlayer stack roughness contributions to the pattern sidewall roughness leading to resist LER were examined and no correlations between the two were found. At the same time, the chemical properties of the underlayer stacks are shown to have strong influences on the resist roughness and process performance. Exact mechanisms behind this are not clearly understood at present.

Paper Details

Date Published: 17 March 2010
PDF: 12 pages
Proc. SPIE 7636, Extreme Ultraviolet (EUV) Lithography, 763605 (17 March 2010); doi: 10.1117/12.848405
Show Author Affiliations
Simi A. George, Lawrence Berkeley National Lab. (United States)
Patrick P. Naulleau, Lawrence Berkeley National Lab. (United States)
Ahila Krishnamoorthy, Honeywell Electronic Materials (United States)
Zeyu Wu, Honeywell Electronic Materials (United States)
Edward W. Rutter, Honeywell Electronic Materials (United States)
Joseph T. Kennedy, Honeywell Electronic Materials (United States)
Song Yuan Xie, Honeywell Electronic Materials (United States)
Kyle Y. Flanigan, Mallinckrodt-Baker Corp. (United States)
Thomas I. Wallow, GLOBALFOUNDRIES Inc. (United States)


Published in SPIE Proceedings Vol. 7636:
Extreme Ultraviolet (EUV) Lithography
Bruno M. La Fontaine, Editor(s)

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