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Proceedings Paper

Decomposition strategies for self-aligned double patterning
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Paper Abstract

Spacer technology, a self-aligned double patterning (SADP) technique, has been drawing more and more attention due to its less stringent overlay requirements compared to other double-patterning methods. However, use of SADP techniques was previously limited by the lack of flexibility in terms of decomposition options , and significant developments were mainly implemented for 1D-type applications for memory. In this paper, we extend the SADP technique into the logic field. A matrix of design rule extraction structures was created by GLOBALFOUNDRIES, which was then decomposed into 2-mask SADP patterning solutions by Cadence Design Systems, and wafers were manufactured by Applied Materials. The wafers were processed in both positive and negative spacer tones, and then we evaluate the design capabilities of SADP for logic BEOL patterning on pitches from 56nm to 64nm. It shows that the SADP has big advantage over other pitch splitting techniques such as LELE in terms of design rules, overlay, and CD uniformity control. With SADP, the most challenging design rules for BEOL such as tip-to-tip and tip-to-line can be reduced 50% from 80 nm to 40 nm.

Paper Details

Date Published: 3 April 2010
PDF: 13 pages
Proc. SPIE 7641, Design for Manufacturability through Design-Process Integration IV, 76410T (3 April 2010); doi: 10.1117/12.848387
Show Author Affiliations
Yuansheng Ma, GLOBALFOUNDRIES Inc. (United States)
Jason Sweis, Cadence Design Systems, Inc. (United States)
Chris Bencher, Applied Materials, Inc. (United States)
Huixiong Dai, Applied Materials, Inc. (United States)
Yongmei Chen, Applied Materials, Inc. (United States)
Jason P. Cain, GLOBALFOUNDRIES Inc. (United States)
Yunfei Deng, GLOBALFOUNDRIES Inc. (United States)
Jongwook Kye, GLOBALFOUNDRIES Inc. (United States)
Harry J. Levinson, GLOBALFOUNDRIES Inc. (United States)


Published in SPIE Proceedings Vol. 7641:
Design for Manufacturability through Design-Process Integration IV
Michael L. Rieger; Joerg Thiele, Editor(s)

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