Share Email Print
cover

Proceedings Paper

Actinic review of EUV masks
Format Member Price Non-Member Price
PDF $14.40 $18.00
cover GOOD NEWS! Your organization subscribes to the SPIE Digital Library. You may be able to download this paper for free. Check Access

Paper Abstract

Management of mask defects is a major challenge for the introduction of EUV for HVM production. Once a defect has been detected, its printing impact needs to be predicted. Potentially the defect requires some repair, the success of which needs to be proven. This defect review has to be done with an actinic inspection system that matches the imaging conditions of an EUV scanner. During recent years, several concepts for such an aerial image metrology system (AIMS™) have been proposed. However, until now no commercial solution exists for EUV. Today, advances in EUV optics technology allow envisioning a solution that has been discarded before as unrealistic. We present this concept and its technical cornerstones.While the power requirement for the EUV source is less demanding than for HVM lithography tools, radiance, floor space, and stability are the main criteria for source selection. The requirement to emulate several generations of EUV scanners demands a large flexibility for the ilumination and imaging systems. New critical specifications to the EUV mirrors in the projection microscope can be satisfied using our expertise from lithographic mirrors. In summary, an EUV AIMS™ meeting production requirements seems to be feasible.

Paper Details

Date Published: 20 March 2010
PDF: 11 pages
Proc. SPIE 7636, Extreme Ultraviolet (EUV) Lithography, 76361C (20 March 2010); doi: 10.1117/12.848380
Show Author Affiliations
Heiko Feldmann, Carl Zeiss SMT AG (Germany)
Johannes Ruoff, Carl Zeiss SMT AG (Germany)
Wolfgang Harnisch, Carl Zeiss SMS GmbH (Germany)
Winfried Kaiser, Carl Zeiss SMT AG (Germany)


Published in SPIE Proceedings Vol. 7636:
Extreme Ultraviolet (EUV) Lithography
Bruno M. La Fontaine, Editor(s)

© SPIE. Terms of Use
Back to Top