Share Email Print

Proceedings Paper

Aerial imaging qualification and metrology for source mask optimization
Author(s): Amir Sagiv; Jo Finders; Robert Kazinczi; Andre Engelen; Frank Duray; Ingrid Minnaert-Janssen; Shmoolik Mangan; Dror Kasimov; Ilan Englard
Format Member Price Non-Member Price
PDF $14.40 $18.00
cover GOOD NEWS! Your organization subscribes to the SPIE Digital Library. You may be able to download this paper for free. Check Access

Paper Abstract

As the semiconductor industry moves to 3X technology nodes and below, holistic lithography source mask optimization (SMO) methodology targets an increase in the overall litho performance with improved process windows. The typical complexity of both mask and illumination source exceeds what the lithographic industry has been accustomed to, and presents a novel challenge to mask qualification and metrology. In this paper we demonstrate the latest in aerial imaging technologies of Applied Material's Aera2TM mask inspection tool. The aerial imaging capability opens the door to a wide variety of metrological measurements analysis at aerial level and provides enabling solutions for mask and scanner qualifications. In particular, we demonstrate core and periphery DRAM pattern process window assessment and MEEF measurements, performed on an advanced test mask.

Paper Details

Date Published: 1 April 2010
PDF: 11 pages
Proc. SPIE 7638, Metrology, Inspection, and Process Control for Microlithography XXIV, 763830 (1 April 2010); doi: 10.1117/12.848376
Show Author Affiliations
Amir Sagiv, Applied Materials (Israel)
Jo Finders, ASML Netherlands B.V. (Netherlands)
Robert Kazinczi, ASML Netherlands B.V. (Netherlands)
Andre Engelen, ASML Netherlands B.V. (Netherlands)
Frank Duray, ASML Netherlands B.V. (Netherlands)
Ingrid Minnaert-Janssen, ASML Netherlands B.V. (Netherlands)
Shmoolik Mangan, Applied Materials (Israel)
Dror Kasimov, Applied Materials (Israel)
Ilan Englard, Applied Materials (Israel)

Published in SPIE Proceedings Vol. 7638:
Metrology, Inspection, and Process Control for Microlithography XXIV
Christopher J. Raymond, Editor(s)

© SPIE. Terms of Use
Back to Top