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Proceedings Paper

Corner rounding in EUV photoresist: tuning through molecular weight, PAG size, and development time
Author(s): Christopher N. Anderson; Joe Daggett; Patrick P. Naulleau
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Paper Abstract

In this paper, the corner rounding bias of a commercially available extreme ultraviolet photoresist is monitored as molecular weight, photoacid generator (PAG) size, and development time are varied. These experiments show that PAG size influences corner biasing while molecular weight and development time do not. Large PAGs are shown to exhibit less corner biasing, and in some cases, lower corner rounding, than small PAGs. In addition, heavier resist polymers are shown to exhibit less corner rounding than lighter ones.

Paper Details

Date Published: 20 March 2010
PDF: 5 pages
Proc. SPIE 7636, Extreme Ultraviolet (EUV) Lithography, 763617 (20 March 2010); doi: 10.1117/12.848362
Show Author Affiliations
Christopher N. Anderson, Lawrence Berkeley National Lab. (United States)
Joe Daggett, Sumika Electronic Materials, Inc. (United States)
Patrick P. Naulleau, Lawrence Berkeley National Lab. (United States)


Published in SPIE Proceedings Vol. 7636:
Extreme Ultraviolet (EUV) Lithography
Bruno M. La Fontaine, Editor(s)

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