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Proceedings Paper

Achieving interferometric double patterning through wafer rotation
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Paper Abstract

Owing to its simplicity and ability to produce line/space gratings with the highest contrast, interferometric lithography is an ideal platform for developing novel double patterning materials and processes. However, lack of sub-10 nm alignment in most interferometric systems impedes its application. In this paper, litho-etch-litho double patterning on a two-beam interferometric system is achieved by converting Cartesian alignment into angular alignment. By concentrically rotating the wafer in the second exposure, the interleaved region between the two exposures allows for the evaluation of double patterning process and materials. Geometric analysis shows that angular alignment has greatly relaxed requirements compared to the Cartesian alignment. It is calculated that for 22 nm double patterning technologies, rotation angle larger than 0.12 degree is sufficient to produce 1 μm long frequency doubled line/space patterns with less than 10% CD variation.

Paper Details

Date Published: 10 March 2010
PDF: 5 pages
Proc. SPIE 7640, Optical Microlithography XXIII, 76401Z (10 March 2010); doi: 10.1117/12.848345
Show Author Affiliations
Peng Xie, Rochester Institute of Technology (United States)
Neal V. Lafferty, Rochester Institute of Technology (United States)
Bruce W. Smith, Rochester Institute of Technology (United States)

Published in SPIE Proceedings Vol. 7640:
Optical Microlithography XXIII
Mircea V. Dusa; Will Conley, Editor(s)

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