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Proceedings Paper

Comparison of star and linear ArF resists
Author(s): Drew C. Forman; Florian Wieberger; Andre Gröschel; Axel H. E. Müller; Hans-Werner Schmidt; Christopher K. Ober
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Paper Abstract

Linear and star-shaped ArF photoresists were prepared and preliminary lithographic comparison was performed using electron-beam exposure. An oligo-initiator based on saccharose forms the core of the star shaped photoresist from which three standard ArF photoresist monomers, α-gamma butyrolactone methacrylate (GBLMA), methyl adamantyl methacrylate (MAMA) and hydroxyl adamantyl methacrylate (HAMA) were polymerized. Conditions were adjusted to obtain a low polydispersity, 6 kg/mol star polymer with a degree of polymerization of approximately five mers per arm. For comparison, a linear photoresist control was prepared using the same scheme. The star resist architecture was found to improve roughness without reducing sensitivity or resolution.

Paper Details

Date Published: 26 March 2010
PDF: 8 pages
Proc. SPIE 7639, Advances in Resist Materials and Processing Technology XXVII, 76390P (26 March 2010); doi: 10.1117/12.848344
Show Author Affiliations
Drew C. Forman, Cornell Univ. (United States)
Florian Wieberger, Univ. Bayreuth (Germany)
Andre Gröschel, Univ. Bayreuth (Germany)
Axel H. E. Müller, Univ. Bayreuth (Germany)
Hans-Werner Schmidt, Univ. Bayreuth (Germany)
Christopher K. Ober, Cornell Univ. (United States)


Published in SPIE Proceedings Vol. 7639:
Advances in Resist Materials and Processing Technology XXVII
Robert D. Allen, Editor(s)

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