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Proceedings Paper

A method to circumvent obstacles of LER/LWR for 22nm node and less: a new concepts for existing line-edge roughness technologies
Author(s): Wynn Bear
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Date Published:
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Proc. SPIE 7636, Extreme Ultraviolet (EUV) Lithography, ; doi: 10.1117/12.848340
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Wynn Bear, International EUVL & Precision Engineering, Inc. (United States)


Published in SPIE Proceedings Vol. 7636:
Extreme Ultraviolet (EUV) Lithography
Bruno M. La Fontaine, Editor(s)

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