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Proceedings Paper

Simulation study of directed self-assembly for 10-nm pattern formation
Author(s): Sang-Kon Kim; Hye-Keun Oh; Young-Dae Jung; Ilsin An
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Paper Abstract

Since the top-down approaches, such as the extremely ultraviolet (EUV) technique and the high-index fluid-based immersion ArF lithography, may be cover one or two generations, these lithography technology are getting more severe for the feature size scaling down to sub-10 nm. The directed self-assembly technology of block copolymers is one of the candidates for next-generation lithography. The process simulation can help to solve the easy process, the low critical dimension (CD) variation, the low edge roughness, the high throughput, and the low number density of pattern defects for the directed self-assembly technology. In this paper, a directed self-assembly lithography process of block copolymers is modeled and simulated in molecular scale. The sub-10 nm patterns can be formed by using the precise pattern placement of conventional "top-down" lithography methods with the well-defined nanostructures and self-healing properties of "bottom-up" block copolymer self-assembly. For 35-nm pattern formation, simulation results are similar with experiment results.

Paper Details

Date Published: 30 March 2010
PDF: 6 pages
Proc. SPIE 7639, Advances in Resist Materials and Processing Technology XXVII, 76392M (30 March 2010); doi: 10.1117/12.848310
Show Author Affiliations
Sang-Kon Kim, Hanyang Univ. (Korea, Republic of)
Hye-Keun Oh, Hanyang Univ. (Korea, Republic of)
Young-Dae Jung, Hanyang Univ. (Korea, Republic of)
Ilsin An, Hanyang Univ. (Korea, Republic of)

Published in SPIE Proceedings Vol. 7639:
Advances in Resist Materials and Processing Technology XXVII
Robert D. Allen, Editor(s)

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