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Proceedings Paper

OPC model error study through mask and SEM measurement error
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Paper Abstract

Mask and metrology errors such as SEM (Scanning Electron Microscopy) measurement errors are currently not accounted for when calibrating OPC models. Nevertheless, they can lead to erroneous model parameters therefore causing inaccuracies in the model prediction if these errors are of the same order of magnitude than targeted modeling accuracy. In this study, we used a dedicated design of hundres of features exposed through a Focus Exposure Matrix for the metrology error, we compared the SEM measurements to AFM measurements for as much as 105 features exposed in various process conditions of does and defocus. These data have then been used in a OPC model calibration procedure. We show that the impact of the metrology error is not negligible and demonstrate the importance of taking into account these errors in order to improve the reliability of the OPC models.

Paper Details

Date Published: 1 April 2010
PDF: 7 pages
Proc. SPIE 7638, Metrology, Inspection, and Process Control for Microlithography XXIV, 76381Y (1 April 2010); doi: 10.1117/12.848309
Show Author Affiliations
Mame Kouna Top, STMicroelectronics (France)
LTM-CNRS (France)
David Fuard, LTM-CNRS (France)
Vincent Farys, STMicroelectronics (France)
Patrick Schiavone, LTM-CNRS (France)
Georgia Institute of Technology (United States)


Published in SPIE Proceedings Vol. 7638:
Metrology, Inspection, and Process Control for Microlithography XXIV
Christopher J. Raymond, Editor(s)

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