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Proceedings Paper

Evaluation of 25-nm pitch SiO2/Si multilayer grating reference using CD-SEM
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Paper Abstract

We have developed a 25-nm pitch multilayer grating pattern for CD-SEM magnification calibration instead of the conventional 100-nm pitch grating reference. The 25-nm pitch grating reference was fabricated by multilayer deposition of alternative alternating SiO2 and Si layers and then the reference chip was fabricated by substrate bonding and polishing process. Finally the 25-nm pitch grating pattern was achieved using the material-selective chemical etching of the polished cross-sectional surface. We evaluated the 25-nm pitch grating reference chip using CD-SEM. A high-contrast secondary electron image of the grating pattern was obtained under 1-kV acceleration voltage. The uniformity of the 25-nm pitch size of the grating was less than 1 nm in 3σ. The line edge roughness of the grating pattern was also less than 1 nm. Such a fine and uniform grating pattern will fulfill the requirements of a magnification calibration reference for next-generation CD-SEM.

Paper Details

Date Published: 2 April 2010
PDF: 8 pages
Proc. SPIE 7638, Metrology, Inspection, and Process Control for Microlithography XXIV, 76382R (2 April 2010); doi: 10.1117/12.848308
Show Author Affiliations
Hiroki Kawada, Hitachi High-Technologies Corp. (Japan)
Yoshinori Nakayama, Hitachi, Ltd. (Japan)
Jiro Yamamoto, Hitachi, Ltd. (Japan)


Published in SPIE Proceedings Vol. 7638:
Metrology, Inspection, and Process Control for Microlithography XXIV
Christopher J. Raymond, Editor(s)

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