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Proceedings Paper

Source-mask optimization (SMO): from theory to practice
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Paper Abstract

Source Mask Optimization techniques are gaining increasing attention as RET computational lithography techniques in sub-32nm design nodes. However, practical use of this technique requires careful considerations in the use of the obtained pixilated or composite source and mask solutions, along with accurate modeling of mask, resist, and optics, including scanner scalar and vector aberrations as part of the optimization process. We present here a theory-to-practice case of applying ILT-based SMO on 22nm design patterns.

Paper Details

Date Published: 3 March 2010
PDF: 10 pages
Proc. SPIE 7640, Optical Microlithography XXIII, 764028 (3 March 2010); doi: 10.1117/12.848257
Show Author Affiliations
Thuc Dam, Luminescent Technologies, Inc. (United States)
Vikram Tolani, Luminescent Technologies, Inc. (United States)
Peter Hu, Luminescent Technologies, Inc. (United States)
Ki-Ho Baik, Luminescent Technologies, Inc. (United States)
Linyong Pang, Luminescent Technologies, Inc. (United States)
Bob Gleason, Luminescent Technologies, Inc. (United States)
Steven D. Slonaker, Nikon Precision Inc. (United States)
Jacek K. Tyminski, Nikon Precision Inc. (United States)

Published in SPIE Proceedings Vol. 7640:
Optical Microlithography XXIII
Mircea V. Dusa; Will Conley, Editor(s)

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