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Proceedings Paper

High-power spectrally-stable DBR semiconductor lasers designed for pulsing in the nanosecond regime
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Paper Abstract

The basic design considerations for a spectrally-stable DBR semiconductor laser specifically designed for pulsing in the nanosecond regime is presented, along with test results from devices fabricated according to these design parameters. Results show excellent mode selection and spectral stability over an extremely large range of conditions, including temperature ranges of 15-60°C and peak drive current ranges from threshold to 880 mA. These lasers exhibit peak output powers of greater than 500 mW for DBR semiconductor lasers at 976 nm and 1064 nm while remaining spectrally stable. Chirp data shows the chirp can be effectively tuned from approximately 1 GHz to greater than 20 GHz by varying the pulse width and peak drive current.

Paper Details

Date Published: 12 February 2010
PDF: 11 pages
Proc. SPIE 7616, Novel In-Plane Semiconductor Lasers IX, 76160W (12 February 2010); doi: 10.1117/12.848064
Show Author Affiliations
Jason K. O'Daniel, Photodigm, Inc. (United States)
Martin Achtenhagen, Photodigm, Inc. (United States)

Published in SPIE Proceedings Vol. 7616:
Novel In-Plane Semiconductor Lasers IX
Alexey A. Belyanin; Peter M. Smowton, Editor(s)

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