Share Email Print
cover

Proceedings Paper

Grating coupled enhancement of light emission from IR light emitting diode devices
Author(s): Naresh C. Das; W. Change
Format Member Price Non-Member Price
PDF $14.40 $18.00

Paper Abstract

We report here the electroluminescence in the range of 3-4.5 μm and 6-10 μm from Sb-based type II interband quantum cascade structure LED devices. We measured the light emission from the top surface of the device with different grating structures. We used different etch depths for the grating formation. The light-current-voltage (LIV) characteristics measured at both room and cryogenic temperatures show that the device with 45 degree angle grating and 1.0 μm deep etch onto the GaSb surface has the highest emission power.

Paper Details

Date Published: 24 February 2010
PDF: 10 pages
Proc. SPIE 7617, Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XIV, 76171W (24 February 2010); doi: 10.1117/12.847990
Show Author Affiliations
Naresh C. Das, Army Research Lab. (United States)
W. Change, Army Research Lab. (United States)


Published in SPIE Proceedings Vol. 7617:
Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XIV
Klaus P. Streubel; Heonsu Jeon; Li-Wei Tu; Norbert Linder, Editor(s)

© SPIE. Terms of Use
Back to Top