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Proceedings Paper

Printability and inspectability of programmed pit defects on the masks in EUV lithography
Author(s): In-Yong Kang; Hwan-Seok Seo; Byung-Sup Ahn; Dong-Gun Lee; Dongwan Kim; Sungmin Huh; Cha-Won Koh; Brian Cha; Seoung-Sue Kim; Han-Ku Cho; Iacopo Mochi; Kenneth Goldberg
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Paper Abstract

Printability and inspectability of phase defects in EUVL mask originated from substrate pit were investigated. For this purpose, PDMs with programmed pits on substrate were fabricated using different ML sources from several suppliers. Simulations with 32-nm HP L/S show that substrate pits with below ~20 nm in depth would not be printed on the wafer if they could be smoothed by ML process down to ~1 nm in depth on ML surface. Through the investigation of inspectability for programmed pits, minimum pit sizes detected by KLA6xx, AIT, and M7360 depend on ML smoothing performance. Furthermore, printability results for pit defects also correlate with smoothed pit sizes. AIT results for patterned mask with 32-nm HP L/S represents that minimum printable size of pits could be ~28.3 nm of SEVD. In addition, printability of pits became more printable as defocus moves to (-) directions. Consequently, printability of phase defects strongly depends on their locations with respect to those of absorber patterns. This indicates that defect compensation by pattern shift could be a key technique to realize zero printable phase defects in EUVL masks.

Paper Details

Date Published: 20 March 2010
PDF: 9 pages
Proc. SPIE 7636, Extreme Ultraviolet (EUV) Lithography, 76361B (20 March 2010); doi: 10.1117/12.847956
Show Author Affiliations
In-Yong Kang, SAMSUNG Electronics Co., Ltd. (Korea, Republic of)
Hwan-Seok Seo, SAMSUNG Electronics Co., Ltd. (Korea, Republic of)
Byung-Sup Ahn, SAMSUNG Electronics Co., Ltd. (Korea, Republic of)
Dong-Gun Lee, SAMSUNG Electronics Co., Ltd. (Korea, Republic of)
Dongwan Kim, SAMSUNG Electronics Co., Ltd. (Korea, Republic of)
Sungmin Huh, SAMSUNG Electronics Co., Ltd. (Korea, Republic of)
SEMATECH North (United States)
Cha-Won Koh, SAMSUNG Electronics Co., Ltd. (Korea, Republic of)
SEMATECH North (United States)
Brian Cha, SAMSUNG Electronics Co., Ltd. (Korea, Republic of)
SEMATECH North (United States)
Seoung-Sue Kim, SAMSUNG Electronics Co., Ltd. (Korea, Republic of)
Han-Ku Cho, SAMSUNG Electronics Co., Ltd. (Korea, Republic of)
Iacopo Mochi, Lawrence Berkeley National Lab. (United States)
Kenneth Goldberg, Lawrence Berkeley National Lab. (United States)


Published in SPIE Proceedings Vol. 7636:
Extreme Ultraviolet (EUV) Lithography
Bruno M. La Fontaine, Editor(s)

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