
Proceedings Paper
Absorber stack optimization in EUVL masks: lithographic performances in alpha demo tool and other issuesFormat | Member Price | Non-Member Price |
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Paper Abstract
Thinner absorber structure in EUVL mask is supposed to be applied in 2x HP node since it shows several
advantages including H-V bias reduction. Here, lithographic performances of EUVL masks as a function of absorber
stack height are investigated using ADT exposure experiments. Wafer SEM images show that minimum resolution is
almost identical at ~27.5 nm with absorber thickness ranging from 45 to 70 nm. Simulations also exhibit that NILS and
contrast become maximized and saturated in those ranges. However, thinner absorber structure using 50-nm-thick
absorber shows much lower H-V bias than conventional structure using 70-nm-thick absorber. MEEF, EL, DOF, and
LWR are also slightly improved with thinner absorber. One of the noticeable issues in thin absorber is low OD which
results in pattern damages and CD reduction at shot edges due to light leakage from the neighboring exposures. To
overcome these issues, appropriate light shielding process during mask fabrication as well as minimizing OoB radiation
in EUVL scanner are required. Another item to prepare for 2x HP node is to increase defect detection sensitivity with
19x nm inspection tools. Thus, absorber stacks with new ARC layer optimized for 19x nm inspection should be
developed and applied in EUVL mask blanks.
Paper Details
Date Published: 20 March 2010
PDF: 9 pages
Proc. SPIE 7636, Extreme Ultraviolet (EUV) Lithography, 76360X (20 March 2010); doi: 10.1117/12.847955
Published in SPIE Proceedings Vol. 7636:
Extreme Ultraviolet (EUV) Lithography
Bruno M. La Fontaine, Editor(s)
PDF: 9 pages
Proc. SPIE 7636, Extreme Ultraviolet (EUV) Lithography, 76360X (20 March 2010); doi: 10.1117/12.847955
Show Author Affiliations
Hwan-Seok Seo, SAMSUNG Electronics Co., Ltd. (Korea, Republic of)
Dong-Gun Lee, SAMSUNG Electronics Co., Ltd. (Korea, Republic of)
Byung-Sup Ahn, SAMSUNG Electronics Co., Ltd. (Korea, Republic of)
Cha-Won Koh, SAMSUNG Electronics Co., Ltd. (Korea, Republic of)
In-Yong Kang, SAMSUNG Electronics Co., Ltd. (Korea, Republic of)
Dong-Gun Lee, SAMSUNG Electronics Co., Ltd. (Korea, Republic of)
Byung-Sup Ahn, SAMSUNG Electronics Co., Ltd. (Korea, Republic of)
Cha-Won Koh, SAMSUNG Electronics Co., Ltd. (Korea, Republic of)
In-Yong Kang, SAMSUNG Electronics Co., Ltd. (Korea, Republic of)
Tae Geun Kim, SAMSUNG Electronics Co., Ltd. (Korea, Republic of)
Hoon Kim, SAMSUNG Electronics Co., Ltd. (Korea, Republic of)
Dongwan Kim, SAMSUNG Electronics Co., Ltd. (Korea, Republic of)
Seong-Sue Kim, SAMSUNG Electronics Co., Ltd. (Korea, Republic of)
Han-Ku Cho, SAMSUNG Electronics Co., Ltd. (Korea, Republic of)
Hoon Kim, SAMSUNG Electronics Co., Ltd. (Korea, Republic of)
Dongwan Kim, SAMSUNG Electronics Co., Ltd. (Korea, Republic of)
Seong-Sue Kim, SAMSUNG Electronics Co., Ltd. (Korea, Republic of)
Han-Ku Cho, SAMSUNG Electronics Co., Ltd. (Korea, Republic of)
Published in SPIE Proceedings Vol. 7636:
Extreme Ultraviolet (EUV) Lithography
Bruno M. La Fontaine, Editor(s)
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