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Proceedings Paper

Assessing out-of-band flare effects at the wafer level for EUV lithography
Author(s): Simi A. George; Patrick P. Naulleau; Charles D. Kemp; Paul E Denham; Senajith Rekawa
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Paper Abstract

To accurately estimate the flare contribution from the out-of-band (OOB), the integration of a DUV source into the SEMATECH Berkeley 0.3-NA Micro-field Exposure tool is proposed, enabling precisely controlled exposures along with the EUV patterning of resists in vacuum. First measurements evaluating the impact of bandwidth selected exposures with a table-top set-up and subsequent EUV patterning show significant impact on line-edge roughness and process performance. We outline a simulation-based method for computing the effective flare from resist sensitive wavelengths as a function of mask pattern types and sizes. This simulation method is benchmarked against measured OOB flare measurements and the results obtained are in agreement.

Paper Details

Date Published: 22 March 2010
PDF: 10 pages
Proc. SPIE 7636, Extreme Ultraviolet (EUV) Lithography, 763626 (22 March 2010); doi: 10.1117/12.847953
Show Author Affiliations
Simi A. George, Lawrence Berkeley National Lab. (United States)
Patrick P. Naulleau, Lawrence Berkeley National Lab. (United States)
Charles D. Kemp, Lawrence Berkeley National Lab. (United States)
Paul E Denham, Lawrence Berkeley National Lab. (United States)
Senajith Rekawa, Lawrence Berkeley National Lab. (United States)


Published in SPIE Proceedings Vol. 7636:
Extreme Ultraviolet (EUV) Lithography
Bruno M. La Fontaine, Editor(s)

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