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Proceedings Paper

Picosecond laser processing of semiconductor and thin film devices
Author(s): B. W. Baird
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Paper Abstract

Next generation semiconductor, photovoltaic and display devices require precise, highly reliable, and cost-effective laser processing system solutions capable of high average power output at pulse repetition frequencies substantially exceeding 100 KHz. Emerging 45 nm and 32 nm node logic devices contain increasingly complex stacks of difficult to process materials, such as copper and low K dielectrics, demanding precise laser micromachining with minimum heat affected zones and melt effects. Laser memory repair of 5x nm node DRAM memory devices requires fine control of the fuse stack removal to avoid damage to adjacent circuitry. Significant improvements to patterning processes essential to the production of thin film photovoltaic devices are necessary to drive increased device efficiency and reductions in module prices. Similar challenges are faced in devising laser process solutions for crystalline silicon photovoltaic and advanced display devices. Robust picosecond laser architectures, including diode-pumped solid state master oscillator power amplifier or regenerative amplifier, fiber master oscillator power amplifier and fiber-bulk hybrids are broadly employed in investigations to identify solutions for these important industrial thin film laser processing applications. The prospects for broader adoption of industrial picosecond laser processing systems will be addressed along with related implications for advanced picosecond laser and laser system design requirements.

Paper Details

Date Published: 3 March 2010
PDF: 9 pages
Proc. SPIE 7580, Fiber Lasers VII: Technology, Systems, and Applications, 75800Q (3 March 2010); doi: 10.1117/12.847931
Show Author Affiliations
B. W. Baird, Summit Photonics LLC (United States)

Published in SPIE Proceedings Vol. 7580:
Fiber Lasers VII: Technology, Systems, and Applications
Kanishka Tankala, Editor(s)

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