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Proceedings Paper

Detection of photo resist residue on advanced gate layers using optical scattering and advanced analysis techniques
Author(s): Scott Ku; Ying-Hsueh Chang Chien; C. M. Yang; Elvis Wang; Damian Chen; Chris Young; Kevin Sun; Jack Yan; Prasanna Dighe; Avinash Saldanha; David Feiler
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Paper Abstract

Detection of resist residue and organic contamination after photo resist strip and wafer clean early in the high K/metal gate (HK/MG) manufacturing process flow is critical as it has been known to significantly impact yield. This residue, when exposed to subsequent thermal process steps, transforms into solid hard spot(s), and can then be detected by a wafer inspection tool, but unfortunately it is too late to take corrective action. A unique process control solution to detect the presence of residues was developed using advanced analysis of an optical scattering inspection of a litho checkerboard pattern. The presence of residue was then validated with film thickness measurements.

Paper Details

Date Published: 1 April 2010
PDF: 11 pages
Proc. SPIE 7638, Metrology, Inspection, and Process Control for Microlithography XXIV, 76383F (1 April 2010); doi: 10.1117/12.847797
Show Author Affiliations
Scott Ku, Taiwan Semiconductor Manufacturing Co. Ltd. (Taiwan)
Ying-Hsueh Chang Chien, Taiwan Semiconductor Manufacturing Co. Ltd. (Taiwan)
C. M. Yang, KLA-Tencor Corp. (United States)
Elvis Wang, Taiwan Semiconductor Manufacturing Co. Ltd. (Taiwan)
Damian Chen, Taiwan Semiconductor Manufacturing Co. Ltd. (Taiwan)
Chris Young, KLA-Tencor Corp. (United States)
Kevin Sun, KLA-Tencor Corp. (United States)
Jack Yan, KLA-Tencor Corp. (United States)
Prasanna Dighe, KLA-Tencor Corp. (United States)
Avinash Saldanha, KLA-Tencor Corp. (United States)
David Feiler, KLA-Tencor Corp. (United States)


Published in SPIE Proceedings Vol. 7638:
Metrology, Inspection, and Process Control for Microlithography XXIV
Christopher J. Raymond, Editor(s)

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