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Proceedings Paper

Methods for assessing empirical model parameters and calibration pattern measurements
Author(s): Xin Zhou; Eldar Khaliullin; Lan Luan
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Paper Abstract

Assessing an empirical model for ILT or OPC on a full-chip scale is a non-trivial task because the model's fit to calibration input data must be balanced against its robust prediction on wafer prints. When a model does not fit the calibration measurements well, we face the difficult choice between readjusting model parameters and re-measuring wafer CDs of calibration patterns. On the other hand, when a model does fit very well, we will still likely have the nagging suspicion that an overfitting might have occurred. Here we define a few objective and quantitative methods for model assessment. Both theoretical foundation and practical use are presented.

Paper Details

Date Published: 3 March 2010
PDF: 6 pages
Proc. SPIE 7640, Optical Microlithography XXIII, 764038 (3 March 2010); doi: 10.1117/12.847734
Show Author Affiliations
Xin Zhou, Luminescent Technologies (United States)
Eldar Khaliullin, Luminescent Technologies (United States)
Lan Luan, Luminescent Technologies (United States)


Published in SPIE Proceedings Vol. 7640:
Optical Microlithography XXIII
Mircea V. Dusa; Will Conley, Editor(s)

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