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Proceedings Paper

Physical and engineering aspects of passively Q-switched microlasers
Author(s): Yehoshua Kalisky
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Paper Abstract

The issue of microlasers and micro-chip laser devices, passively Q-switched and doped with rare earth lasing ions is well established. The various components of such monolithic lasers are diffusion-bonded to the gain medium or alternatively separated. Laser performance of several configurations based on various hosting crystals, as well as analytical modeling of the Q-switching process will be presented and discussed. The effect of various types of Q-switches on the laser performance will be presented and analyzed.

Paper Details

Date Published: 17 February 2010
PDF: 8 pages
Proc. SPIE 7578, Solid State Lasers XIX: Technology and Devices, 75781M (17 February 2010); doi: 10.1117/12.847243
Show Author Affiliations
Yehoshua Kalisky, Nuclear Research Ctr. Negev (Israel)

Published in SPIE Proceedings Vol. 7578:
Solid State Lasers XIX: Technology and Devices
W. Andrew Clarkson; Norman Hodgson; Ramesh K. Shori, Editor(s)

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