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Proceedings Paper

High performance short wavelength InP-based quantum cascade lasers
Author(s): Dmitry G. Revin; J. Paul Commin; Shiyong Y. Zhang; Andrey B. Krysa; Kenneth Kennedy; John W. Cockburn
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Paper Abstract

We review the development of high performance, short wavelength (3 μm < λ < 3.8 μm) quantum cascade lasers (QCLs) based on the deep quantum well InGaAs/AlAsSb/InP materials system. Use of this system has enabled us to demonstrate room temperature operation at λ ~ 3.1 μm, the shortest room temperature lasing wavelength yet observed for InP-based QCLs. We demonstrate that significant performance improvements can be made by using strain compensated material with selective incorporation of AlAs barriers in the QCL active region. This approach provides reduction in threshold current density and increases the maximum optical power. In such devices, room-temperature peak output powers of up to 20 W can be achieved at λ ~ 3.6 μm, with high peak powers of around 4 W still achievable as wavelength decreases to 3.3 μm.

Paper Details

Date Published: 12 February 2010
PDF: 9 pages
Proc. SPIE 7616, Novel In-Plane Semiconductor Lasers IX, 761612 (12 February 2010); doi: 10.1117/12.847188
Show Author Affiliations
Dmitry G. Revin, The Univ. of Sheffield (United Kingdom)
J. Paul Commin, The Univ. of Sheffield (United Kingdom)
Shiyong Y. Zhang, The Univ. of Sheffield (United Kingdom)
Andrey B. Krysa, The Univ. of Sheffield (United Kingdom)
Kenneth Kennedy, The Univ. of Sheffield (United Kingdom)
John W. Cockburn, The Univ. of Sheffield (United Kingdom)


Published in SPIE Proceedings Vol. 7616:
Novel In-Plane Semiconductor Lasers IX
Alexey A. Belyanin; Peter M. Smowton, Editor(s)

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