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Proceedings Paper

Growth of intersubband GaN/AlGaN heterostructures
Author(s): A. Dussaigne; S. Nicolay; D. Martin; A. Castiglia; N. Grandjean; L. Nevou; H. Machhadani; M. Tchernycheva; L. Vivien; F. H. Julien; T. Remmele; M. Albrecht
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Paper Abstract

GaN/AlN multiple quantum wells (MQWs), designed for intersubband (ISB) absorption in the telecommunication range, are grown by molecular beam epitaxy. We demonstrate that the use of both AlN template and optimized growth temperature allows to reach ISB transition energy in the telecom range, i.e. above 0.8 eV (λ = 1.55 μm). Absorption spectra exhibit narrow linewidth (< 50 meV) with a relative energy broadening of 8%. An electro-optical modulator based on electron tunnelling in coupled QWs is then fabricated. A modulation bandwidth of 2 GHz at -3 dB cut off frequency is achieved for 15x15 μm2 mesas. We show that the modulation rate is limited by the device geometry rather than by the material quality, which makes this technology a good candidate for THz regime.

Paper Details

Date Published: 22 January 2010
PDF: 10 pages
Proc. SPIE 7608, Quantum Sensing and Nanophotonic Devices VII, 76080H (22 January 2010); doi: 10.1117/12.847082
Show Author Affiliations
A. Dussaigne, Ecole Polytechnique Fédérale de Lausanne (Switzerland)
S. Nicolay, Ecole Polytechnique Fédérale de Lausanne (Switzerland)
D. Martin, Ecole Polytechnique Fédérale de Lausanne (Switzerland)
A. Castiglia, Ecole Polytechnique Fédérale de Lausanne (Switzerland)
N. Grandjean, Ecole Polytechnique Fédérale de Lausanne (Switzerland)
L. Nevou, Institut d'Electronique Fondamentale, CNRS, Univ. Paris-Sud 11 (France)
H. Machhadani, Institut d'Electronique Fondamentale, CNRS, Univ. Paris-Sud 11 (France)
M. Tchernycheva, Institut d'Electronique Fondamentale, CNRS, Univ. Paris-Sud 11 (France)
L. Vivien, Institut d'Electronique Fondamentale, CNRS, Univ. Paris-Sud 11 (France)
F. H. Julien, Institut d'Electronique Fondamentale, CNRS, Univ. Paris-Sud 11 (France)
T. Remmele, Leibniz-Institut für Kristallzüchtung (Germany)
M. Albrecht, Leibniz-Institut für Kristallzüchtung (Germany)


Published in SPIE Proceedings Vol. 7608:
Quantum Sensing and Nanophotonic Devices VII
Manijeh Razeghi; Rengarajan Sudharsanan; Gail J. Brown, Editor(s)

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