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Proceedings Paper

High-sensitivity visible and IR (1550nm) Si nanowire photodetectors
Author(s): Hongkwon Kim; Arthur Zhang; James Cheng; Yu-Hwa Lo
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Paper Abstract

Vertical silicon nanowire detectors with high phototransistive gain have been demonstrated and the principles responsible for the high gain have been reported in recent publications. The emphasis of this paper is (a) the fabrication technology of silicon nanowire array detectors that can be integrated with Si VLSI and (b) the ability of sub-bandgap detection to achieve ultrawide band (from UV to IR) responsivity. We have demonstrated responsivity of greater than 100 A/W at 1550 nm for single crystal silicon nanowires to detect picowatts of IR light, the highest record ever reported for single crystal silicon detectors.

Paper Details

Date Published: 22 January 2010
PDF: 7 pages
Proc. SPIE 7608, Quantum Sensing and Nanophotonic Devices VII, 76082F (22 January 2010); doi: 10.1117/12.847060
Show Author Affiliations
Hongkwon Kim, Univ. of California, San Diego (United States)
Arthur Zhang, Univ. of California, San Diego (United States)
James Cheng, Univ. of California, San Diego (United States)
Yu-Hwa Lo, Univ. of California, San Diego (United States)


Published in SPIE Proceedings Vol. 7608:
Quantum Sensing and Nanophotonic Devices VII
Manijeh Razeghi; Rengarajan Sudharsanan; Gail J. Brown, Editor(s)

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