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Proceedings Paper

EUV lithography at the 22nm technology node
Author(s): Obert Wood; Chiew-Seng Koay; Karen Petrillo; Hiroyuki Mizuno; Sudhar Raghunathan; John Arnold; Dave Horak; Martin Burkhardt; Gregory McIntyre; Yunfei Deng; Bruno La Fontaine; Uzo Okoroanyanwu; Tom Wallow; Guillaume Landie; Theodorus Standaert; Sean Burns; Christopher Waskiewicz; Hirohisa Kawasaki; James H.-C. Chen; Matthew Colburn; Bala Haran; Susan S.-C. Fan; Yunpeng Yin; Christian Holfeld; Jens Techel; Jan-Hendrik Peters; Sander Bouten; Brian Lee; Bill Pierson; Bart Kessels; Robert Routh; Kevin Cummings
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Paper Abstract

We are evaluating the readiness of extreme ultraviolet (EUV) lithography for insertion into production at the 15 nm technology node by integrating it into standard semiconductor process flows because we believe that device integration exercises provide the truest test of technology readiness and, at the same time, highlight the remaining critical issues. In this paper, we describe the use of EUV lithography with the 0.25 NA Alpha Demo Tool (ADT) to pattern the contact and first interconnect levels of a large (~24 mm x 32 mm) 22 nm node test chip using EUV masks with state-of-the-art defectivity (~0.3 defects/cm2). We have found that: 1) the quality of EUVL printing at the 22 nm node is considerably higher than the printing produced with 193 nm immersion lithography; 2) printing at the 22 nm node with EUV lithography results in higher yield than double exposure double-etch 193i lithography; and 3) EUV lithography with the 0.25 NA ADT is capable of supporting some early device development work at the 15 nm technology node.

Paper Details

Date Published: 23 March 2010
PDF: 8 pages
Proc. SPIE 7636, Extreme Ultraviolet (EUV) Lithography, 76361M (23 March 2010); doi: 10.1117/12.847049
Show Author Affiliations
Obert Wood, GLOBALFOUNDRIES Inc. (United States)
Chiew-Seng Koay, IBM Corp. (United States)
Karen Petrillo, IBM Corp. (United States)
Hiroyuki Mizuno, Toshiba America Electronic Components, Inc. (United States)
Sudhar Raghunathan, IBM Corp. (United States)
John Arnold, IBM Corp. (United States)
Dave Horak, IBM Corp. (United States)
Martin Burkhardt, IBM Corp. (United States)
Gregory McIntyre, IBM Corp. (United States)
Yunfei Deng, GLOBALFOUNDRIES Inc. (United States)
Bruno La Fontaine, GLOBALFOUNDRIES Inc. (United States)
Uzo Okoroanyanwu, GLOBALFOUNDRIES Inc. (United States)
Tom Wallow, GLOBALFOUNDRIES Inc. (United States)
Guillaume Landie, STMicroelectronics (United States)
Theodorus Standaert, IBM Corp. (United States)
Sean Burns, IBM Corp. (United States)
Christopher Waskiewicz, IBM Corp. (United States)
Hirohisa Kawasaki, Toshiba America Electronic Components, Inc. (United States)
James H.-C. Chen, IBM Corp. (United States)
Matthew Colburn, IBM Corp. (United States)
Bala Haran, IBM Corp. (United States)
Susan S.-C. Fan, IBM Corp. (United States)
Yunpeng Yin, IBM Corp. (United States)
Christian Holfeld, Advanced Mask Technology Ctr. GmbH Co. KG (Germany)
Jens Techel, Advanced Mask Technology Ctr. GmbH Co. KG (Germany)
Jan-Hendrik Peters, Advanced Mask Technology Ctr. GmbH Co. KG (Germany)
Sander Bouten, ASML US, Inc. (United States)
Brian Lee, ASML US, Inc. (United States)
Bill Pierson, ASML US, Inc. (United States)
Bart Kessels, ASML US, Inc. (United States)
Robert Routh, ASML US, Inc. (United States)
Kevin Cummings, ASML US, Inc. (United States)


Published in SPIE Proceedings Vol. 7636:
Extreme Ultraviolet (EUV) Lithography
Bruno M. La Fontaine, Editor(s)

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