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Proceedings Paper

Modeling of photonic-crystal-based high-power high-brightness semiconductor lasers
Author(s): Vitaly Shchukin; Nikolai Ledentsov; Vladimir Kalosha; Thorsten Kettler; Kristijan Posilovic; Daniel Seidlitz; Dieter Bimberg; Nikita Yu. Gordeev; Leonid Ya. Karachinsky; Innokenty I. Novikov; Yuri M. Shernyakov; Alena V. Chunareva; Mikhail V. Maximov
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Paper Abstract

The concepts, features, modeling and practical realizations of high power high brightness semiconductor diode lasers having ultrathick and ultrabroad waveguides and emitting in the single vertical single lateral mode are analyzed. Ultrathick vertical waveguide can be realized as a photonic band crystal with an embedded filter of high order modes. In a second approach a tilted wave laser enables leakage of the optical wave from the active waveguide to the substrate and additional feedback from the back substrate side. Both designs provide high power and low divergence in the fast and the slow axis, and hence an increased brightness. Lateral photonic crystal enables coherent coupling of individual lasers and the mode expansion over an ultrabroad lateral waveguide. Experimental results are presented. Obtained results demonstrate a possibility for further expansion of the concept and using the single mode diodes having an ultrabroad waveguide to construct single mode laser bars and stacks.

Paper Details

Date Published: 25 February 2010
PDF: 18 pages
Proc. SPIE 7597, Physics and Simulation of Optoelectronic Devices XVIII, 75971A (25 February 2010); doi: 10.1117/12.847040
Show Author Affiliations
Vitaly Shchukin, Technische Univ. Berlin (Germany)
Nikolai Ledentsov, Technische Univ. Berlin (Germany)
Vladimir Kalosha, Technische Univ. Berlin (Germany)
Thorsten Kettler, Technische Univ. Berlin (Germany)
Kristijan Posilovic, Technische Univ. Berlin (Germany)
Daniel Seidlitz, Technische Univ. Berlin (Germany)
Dieter Bimberg, Technische Univ. Berlin (Germany)
Nikita Yu. Gordeev, A.F. Ioffe Physical Technical Institute (Russian Federation)
Leonid Ya. Karachinsky, A.F. Ioffe Physical Technical Institute (Russian Federation)
Innokenty I. Novikov, A.F. Ioffe Physical Technical Institute (Russian Federation)
Yuri M. Shernyakov, A.F. Ioffe Physical Technical Institute (Russian Federation)
Alena V. Chunareva, A.F. Ioffe Physical Technical Institute (Russian Federation)
Mikhail V. Maximov, A.F. Ioffe Physical Technical Institute (Russian Federation)


Published in SPIE Proceedings Vol. 7597:
Physics and Simulation of Optoelectronic Devices XVIII
Bernd Witzigmann; Fritz Henneberger; Yasuhiko Arakawa; Marek Osinski, Editor(s)

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